Fairchild FDN5632N-F085 Power Trench MOSFET Trans MOS N-Ch 60V 1.7A
Manufacturer: Fairchild Model: FDN5632N-F085 - Contact
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Width: 1.4 mm
Height: 1.12 mm
Length: 2.9 mm
Fall Time: 1.3 ns
Rise Time: 1.7 ns
Technology: Si
Unit Weight: 30 mg
Channel Mode: Enhancement
Configuration: Single
Qualification: AEC-Q101
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 12 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.1 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 15 ns
Typical Turn-Off Delay Time: 5.2 ns
Id - Continuous Drain Current: 1.6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 98 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 1 V
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- Easy change and return
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