Infineon IKZA75N65SS5XKSA1 IGBTトランジスタ 650 V、75 A シリコンカーバイドショットキーダイオード付きIGBTディスクリート

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 395 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.35 V

Continuous Collector Current at 25 C: 80 A