Toshiba GT20N135SRA,S1E IGBTトランジスタ DISCRET IGBTトランジスタ Vces=1350V Ic=40A

Technology: Si

Unit Weight: 6.150 mg

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 312 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 25 V, 25 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.35 kV

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 40 A