Diodes Incorporated DMN26D0UFB4-7 ສັນຍານນ້ອຍ

Type: Small Signal

Vgs(th): 1.1 V

Vgs (Max): 10V

Power consumption: 350mW

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 230mA

Input Capacitance (Ciss): 14.1pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 3Ohm

Drive Voltage (Max Rds On, Min Rds On): 1.5|4.5V