Diodes Incorporated DMN3016LFDE-7 ອິນເຮນເຊນໂມດ MOSFET ຊ່ອງ N-CHANNEL EH MODE 30V 10A 12mOhm

Width: 2 mm

Height: 0.6 mm

Length: 2 mm

Fall Time: 5.6 ns

Rise Time: 16.5 ns

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 25.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.02 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.8 ns

Typical Turn-Off Delay Time: 26.1 ns

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 16 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.4 V