Diodes Incorporated DXT2012P5-13 BJTs - ທຣານຊິສເຕີບິໂພລາ BIPOLAR TRANS,PNP 60V,-5.5A

Technology: Si

Unit Weight: 96 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 740 mW

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 5.5 A

Maximum DC Collector Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 250 mV