Diodes Incorporated ZTX869 BJTs - ບິໂພລາ ແທຣນຊິສຕໍເຣອດ NPN ບິກ ຊິບ SELine

Width: 2.41 mm

Height: 4.01 mm

Length: 4.77 mm

Technology: Si

Unit Weight: 453.600 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 300 at 10 mA, 1 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 300 at 10 mA, 1 V, 300 at 1 A, 1 V, 250 at 5 A, 1 V, 40 at 20 A, 1 V

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 180 mV