Diodes Incorporated ZXMC3A17DN8TA MOSFET 30V ໂມດການປັບປຸງ

Width: 4 mm

Height: 1.5 mm

Length: 5 mm

Fall Time: 11.2 ns, 8.7 ns

Rise Time: 6.4 ns, 2.9 ns

Technology: Si

Unit Weight: 750 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 12.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 2.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.9 ns, 1.7 ns

Typical Turn-Off Delay Time: 16 ns, 29.2 ns

Id - Continuous Drain Current: 5.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V