Diodes Incorporated ZXTP2014ZQTA BJTs - ບິໂພລາ ທຣານຊິສຕໍເຕີສ Pwr Low Sat Transist

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 300 at - 1 A, - 5 V

Gain Bandwidth Product fT: 120 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100 at - 1 A, - 5 V

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 255 mV