Diodes Incorporated ZXTP25100CZTA BJTs - ບິໂພລາ ທຣານຊິສຕໍ PNP 100V 1A

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 52 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 4.46 W

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 115 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 155 mV