Diodes Incorporated ZXTP56060FDBQ-7 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣອດ 60V ທຣານຊິສຕໍເຣອດ PNP ຄູ່

Technology: Si

Unit Weight: 76 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.47 W

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 2 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 450 mV