Fairchild FJV1845FMTF BJTs - ບາຍໂປລາ ທຣານຊິສຕໍເຣອດ NPN ເອປິແທັຊຍອລ ທຣານຊິສຕໍເຣອດ

Width: 1.3 mm

Height: 0.93 mm

Length: 2.92 mm

Technology: Si

Unit Weight: 39 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 1200

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 70 mV