Fairchild IRLS640A MOSFET 200V N-Channel a-FET Logic Level

Width: 4.9 mm

Height: 16.07 mm

Length: 10.36 mm

Fall Time: 15 ns

Rise Time: 8 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 56 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 9.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 13.3 S

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 1 V