Infineon BSZ100N03MSGATMA1 MOSFETs N-Ch 30V 40A TSDSON-8 OptiMOS 3M

Width: 3.3 mm

Height: 1.1 mm

Length: 3.3 mm

Fall Time: 2.4 ns

Rise Time: 2.8 ns

Technology: Si

Unit Weight: 38.760 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 23 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 30 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 7.3 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V