Infineon BSS84PW H6327 MOSFETs P-Ch -60V 150mA SOT-323-3

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 20.5 ns

Rise Time: 16.2 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 1.5 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.7 ns

Typical Turn-Off Delay Time: 8.6 ns

Id - Continuous Drain Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 mS

Rds On - Drain-Source Resistance: 4.6 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2 V