Infineon IPD70R1K4CEAUMA1 MOSFETs ຜູ້ບໍລິການ

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 18.2 ns

Rise Time: 5.9 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Mounting Style: SMD/SMT

Qg - Gate Charge: 10.5 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 53 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.7 ns

Typical Turn-Off Delay Time: 33 ns

Id - Continuous Drain Current: 5.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.4 Ohms

Vds - Drain-Source Breakdown Voltage: 700 V

Vgs th - Gate-Source Threshold Voltage: 3 V