IXYS CPC3960ZTR MOSFETs 600V N-Channel Depletion-Mode FET

Technology: Si

Unit Weight: 250 mg

Channel Mode: Depletion

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 15 V, + 15 V

Id - Continuous Drain Current: 100 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 44 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.1 V