IXYS IXFK26N100P MOSFETs 26 Amps 1000V

Width: 5.13 mm

Height: 26.16 mm

Length: 19.96 mm

Fall Time: 50 ns

Rise Time: 45 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 780 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 72 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 390 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV