IXYS IXFL44N80 MOSFETs 44 Amps 800V 0.165W Rds

Width: 5.21 mm

Height: 26.42 mm

Length: 20.29 mm

Fall Time: 24 ns

Rise Time: 48 ns

Technology: Si

Unit Weight: 10 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 550 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 44 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 165 mOhms

Vds - Drain-Source Breakdown Voltage: 800 V