IXYS IXGK120N120A3 IGBT Transistors 120 Amps 1200V

Width: 5.31 mm

Height: 26.59 mm

Length: 20.29 mm

Technology: Si

Unit Weight: 10 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 830 W

Operating Temperature Range: - 55 C to + 150 C

Continuous Collector Current: 240 A

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 600 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 240 A