IXYS IXTT1N250HV MOSFETs DiscMosfet NCh Std-VeryHiVolt TO-268AA

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Fall Time: 39 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 6.500 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 41 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 69 ns

Typical Turn-Off Delay Time: 132 ns

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 mS

Rds On - Drain-Source Resistance: 40 Ohms

Vds - Drain-Source Breakdown Voltage: 2.5 kV

Vgs th - Gate-Source Threshold Voltage: 2 V