Micro Commercial Components (MCC) SI3400-TP MOSFETs N-Ch Enh FET 30Vds 5.8A 30A 12Vgs 0.35W

Fall Time: 6 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N- Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 350 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 5.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 8 S

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 700 mV