Microchip Technology 2N3419 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ 80V 3A 1W Power BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 60 at 1 A, 2 V

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 125 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 1 A, 2 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV