Microchip Technology APT4F120K MOSFETs FREDFET MOS8 1200 V 4 A TO-220

Fall Time: 6.9 ns

Rise Time: 4.4 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 43 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 225 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 7.4 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 4.5 S

Rds On - Drain-Source Resistance: 4.2 Ohms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4 V