Microchip Technology APTGF50DH60T1G ໂມດູນ IGBT ໂມດູນພະລັງງານ - IGBT

Width: 40.8 mm

Height: 11.5 mm

Length: 51.6 mm

Technology: Si

Unit Weight: 80 g

Configuration: Asymmetrical Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 250 W

Operating Temperature Range: - 40 C to + 150 C

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 65 A