Microchip Technology ARF1501 RF Power MOSFET RF MOSFET (VDMOS) 1000 V 750 W 40 MHz T1

Gain: 17 dB

Fall Time: 13 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 19 g

Channel Mode: Enhancement

Output Power: 750 W

Mounting Style: Screw Mount

Operating Frequency: 40 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 kW

Vgs - Gate-Source Voltage: + 30 V

Operating Temperature Range: - 55 C to + 175 C

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.5 mS

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 5 V