Microchip Technology ARF461BG ອາວຸດ RF Power MOSFET RF MOSFET (VDMOS) 1000 V 150 W 65 MHz TO-247 Common Source

Gain: 13 dB

Technology: Si

Unit Weight: 12.317 g

Output Power: 150 W

Mounting Style: Through Hole

Number of Channels: 1 Channel

Operating Frequency: 65 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: + 30 V

Id - Continuous Drain Current: 6.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 mS

Vds - Drain-Source Breakdown Voltage: 1 kV

Vgs th - Gate-Source Threshold Voltage: 5 V