Nexperia PBSS5160U-QX BJTs - Bipolar Transistors 20V, 2 A PNP/PNP low VCEsat double transistor

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 415 mW

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100 at -1 A, - 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 255 mV