Nexperia PMDPB70XP,115 MOSFETs 20 V ຊ່ວງທາງສອງ P-channel Trench MOSFET

Fall Time: 48 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 6.750 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 7.8 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.17 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 112 ns

Id - Continuous Drain Current: 3.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 87 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V