NXP AFM912NT1 ອະນຸວັດ RF MOSFET Airfast RF Power LDMOS Transistor, 12 W CW ເກີນ 136 ຫາ 941 MHz, 7.5 V

Gain: 13.3 dB

Technology: Si

Output Power: 15.7 W

Mounting Style: SMD/SMT

Operating Frequency: 136 MHz to 941 MHz

Pd - Power Dissipation: 142 W

Vgs - Gate-Source Voltage: + 12 V

Id - Continuous Drain Current: 4.7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 4.4 S

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V