NXP AFT31150NR5 ອາວຸດກະທົບພະລັງງານ RF MOSFET 150W 2700-3100MHz

Gain: 17.2 dB

Technology: Si

Unit Weight: 3.081 g

Output Power: 150 W

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Operating Frequency: 2.7 GHz to 3.1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 741 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 1.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 65 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V