NXP MMRF1050HR6 ອາຍເຟດ RF Power MOSFET Airfast RF Power LDMOS Transistor, 1050 W Peak ໃນຊ່ວງ 850-950 MHz, 50 V

Gain: 21.3 dB

Technology: Si

Output Power: 1.05 kW

Mounting Style: Screw Mount

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 850 MHz to 950 MHz

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: + 10 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V