NXP MMRF1317HR5 ອາວຸດກະທົບ MOSFET ພະລັງງານ RF LDMOS TRANSISTOR 1030-1090 MHz, 1300 W Peak, 50 V

Gain: 18.8 dB

Technology: Si

Unit Weight: 13.193 g

Output Power: 1.1 kW

Mounting Style: SMD/SMT

Transistor Type: LDMOS FET

Number of Channels: 2 Channel

Operating Frequency: 1.03 GHz to 1.1 GHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 869 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 2.6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 105 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V