NXP MMRF5018HSR5 RF Power MOSFET Airfast RF Power GaN Transistor, 125 W CW ກ່ອນ 1-2700 MHz, 50 V

Technology: GaN-on-SiC

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Pd - Power Dissipation: 165 W

Vgs - Gate-Source Voltage: - 8 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 125 V

Vgs th - Gate-Source Threshold Voltage: - 3.1 VDC