NXP MRF101BN ອະນຸວັດທະຍຸ RF Power MOSFET Wideband RF Power LDMOS Transistor, 100 W CW ເກີນ 1.8-250 MHz, 50 V

Gain: 21.1 dB

Technology: Si

Unit Weight: 60 mg

Output Power: 115 W

Mounting Style: Through Hole

Transistor Type: LDMOS FET

Number of Channels: 1 Channel

Operating Frequency: 1.8 MHz to 250 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 182 W

Vgs - Gate-Source Voltage: + 10 V

Id - Continuous Drain Current: 8.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Forward Transconductance - Min: 7.1 S

Vds - Drain-Source Breakdown Voltage: 133 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V