onsemi FFSB0865B-F085 ດາຍໂອດ Schottky Silicon Carbide 650V 8A SIC SBD GEN1.5

Technology: SiC

Unit Weight: 2.240 g

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

If - Forward Current: 8 A

Ir - Reverse Current: 500 nA

Vf - Forward Voltage: 1.39 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 73 W

Ifsm - Forward Surge Current: 56 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V