onsemi MJD340T4G BJTs - ທຣານຊິສຕໍ່ສອງຂົນ 0.5A 300V 15W NPN

Width: 6.22 mm

Height: 1.5 mm

Length: 6.73 mm

Technology: Si

Unit Weight: 1 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 15 W

Gain Bandwidth Product fT: 10 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 1 V