onsemi NTHD3102CT1G MOSFET 20V 5.5A/-4.2A ຄອມເພລມັນທາລີ

Width: 1.65 mm

Height: 1.05 mm

Length: 3.05 mm

Fall Time: 15.9 ns, 16.9 ns

Rise Time: 15.9 ns, 16.9 ns

Technology: Si

Unit Weight: 85 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 7.9 nC, 8.9 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 600 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 7.2 ns, 6.4 ns

Typical Turn-Off Delay Time: 16.4 ns, 15.7 ns

Id - Continuous Drain Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.7 S, 5.9 S

Rds On - Drain-Source Resistance: 45 mOhms, 80 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 400 mV, 1.2 V