onsemi NTR4503NT1G MOSFET 30V 2.5A ຊ່ອງ N

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Fall Time: 1.6 ns, 1.8 ns

Rise Time: 5.8 ns, 6.7 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.6 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 730 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.8 ns, 5.8 ns

Typical Turn-Off Delay Time: 14 ns, 13.6 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5.3 S

Rds On - Drain-Source Resistance: 110 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V