onsemi NVH4L050N170M1 SiC MOSFETS SIC 1700V M1 52MO TO247-4L

Fall Time: 13 ns

Rise Time: 22 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 105 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 333 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 14 ns

Typical Turn-Off Delay Time: 44 ns

Id - Continuous Drain Current: 45 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 76 mOhms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 4.3 V