onsemi NXH020P120MNF1PG ໂມດູນຮອບສິ້ນ SiC, 2-ຊຸດ ໂຕໂລໂຈຍຮອບສິ້ນ, 1200 V, 20 mohm SiC M1 MOSFET

Fall Time: 8.4 ns

Rise Time: 8.8 ns

Technology: SiC

Configuration: Dual

Mounting Style: Press Fit

Typical Delay Time: 8.4 ns

Transistor Polarity: N-Channel

Pd - Power Dissipation: 211 W

Vgs - Gate-Source Voltage: - 15 V, + 25 V

Typical Turn-On Delay Time: 44 ns

Typical Turn-Off Delay Time: 105 ns

Id - Continuous Drain Current: 51 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V