Renesas Electronics AT25DF512C-SSHN-B ແຟລັດເມມອຣີ serial
Density: 512 Kb
Package: 8SOIC
Mounting: Surface Mount
Rad Hard: 0
Boot Block: No
Access Time: 8 ns
No. of Pins: 8
Architecture: Sectored
Interface Type: Serial-SPI
Memory Density: 512 Kb
Number of Words: 512 kWords
Program Current: 16 mA
Screening Level: Industrial
Block Organization: Symmetrical
Maximum Erase Time: 1.15/Chip s
Supply Voltage Max: 3.6 V
Supply Voltage Min: 1.65 V
Supply Voltage Nom: 3, 2.5 V
Clock Frequency Max: 104 MHz
Operating Temperature: -40 to 85 °C
Number of Bits per Word: 1 Bit
Maximum Programming Time: 3.5/Page ms
Maximum Operating Current: 10 mA
Operating Temperature Max: 85 °C
Operating Temperature Min: -40 °C
Maximum Random Access Time: 8 ns
Simultaneous Read/Write Support: No
Typical Operating Supply Voltage: 1.8, 2.5, 3.3 V
Erase Suspend/Resume Modes Support: No
ຮັບສ່ວນຫຼຸດພິເສດຕາມປະລິມານ, ອັບເດດລາຄາຂາຍສົ່ງ ແລະ ການແຈ້ງເຕືອນສິນຄ້າໃໝ່ສົ່ງກົງເຖິງອິນບັອກຂອງທ່ານ.
ໂດຍການສະໝັກສະມາຊິກ, ທ່ານຍອມຮັບ ເງື່ອນໄຂການໃຫ້ບໍລິການ ແລະ ນະໂຍບາຍຄວາມເປັນສ່ວນຕົວ ຂອງພວກເຮົາ.
ເຂົ້າເຖິງຜູ້ຊ່ຽວຊານທີ່ໄດ້ຮັບການຢັ້ງຢືນຂອງພວກເຮົາໂດຍກົງ