Renesas Electronics N0608N-ZK-E1-AY MOSFETs P. TRANS. N-CH POWER MOSFET 60V TO-252

Fall Time: 5 ns

Rise Time: 11 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50.2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 52 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 32 S

Rds On - Drain-Source Resistance: 14.3 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V