Renesas Electronics RJF0412JSP-00#J0 MOSFETs POWER TRS1 ພາລະລັງງານລົດ ຄວາມຮ້ອນ

Fall Time: 12.7 us

Rise Time: 31.6 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 6.5 us

Typical Turn-Off Delay Time: 5.3 us

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 43 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V