ROHM Semiconductor 2SA2007E BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີສ Trans GP BJT PNP 60V 12A

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 320

Gain Bandwidth Product fT: 80 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: - 12 A

Maximum DC Collector Current: 12 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 300 mV