ROHM Semiconductor 2SA2048KT146Q BJTs - ບາຍເປີ Transistors TRANS GP BJT PNP 30V 1A 3PIN

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 30 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 120 at 100 mA, 2 V

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 150 mV