ROHM Semiconductor 2SAR502U3T106 BJTs - ບິໂພລາ ທຣານຊິສຕໍ PNP -0.5A Ic -30V UMT3

Technology: Si

Unit Weight: 61 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 500 at - 100 mA, - 2 V

Gain Bandwidth Product fT: 520 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at - 100 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 400 mV