ROHM Semiconductor 2SB1689T106 BJTs - ບິໂພລາ ທຣານຊິສຕໍເຣີ PNP 12V 1.5A

Width: 1.25 mm

Height: 0.8 mm

Length: 2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 680 at - 200 mA, - 2 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 200 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 200 mV