ROHM Semiconductor BSM180C12P3C202 ໂມດູນພະລັງງານ SiC ການລະວັງ, ລູກຄ້າເປັນການເລືອກ, ພິຈາລະນາ NCNR

Fall Time: 45 ns

Rise Time: 45 ns

Technology: SiC

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.6 V

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 880 W

Vgs - Gate-Source Voltage: - 6 V, + 22 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 165 ns

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V