ROHM Semiconductor QS6M4TR MOSFET N+P 30 20V 1.5A TSMT6

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 15 ns, 20 ns

Rise Time: 18 ns, 12 ns

Technology: Si

Unit Weight: 14 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 1.6 nC, 3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 7 ns, 10 ns

Typical Turn-Off Delay Time: 15 ns, 45 ns

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 215 mOhms, 230 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V, 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V, 2 V